IAUC120N04S6N006ATMA1
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Infineon Technologies IAUC120N04S6N006ATMA1

Manufacturer No:
IAUC120N04S6N006ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IAUC120N04S6N006ATMA1 Datasheet
ECAD Model:
-
Description:
IAUC120N04S6N006ATMA1
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:120A (Tj)
Drive Voltage (Max Rds On, Min Rds On):7V, 10V
Rds On (Max) @ Id, Vgs:0.6mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:3V @ 130µA
Gate Charge (Qg) (Max) @ Vgs:151 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:10117 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):187W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-53
Package / Case:8-PowerTDFN
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Similar Products

Part Number IAUC120N04S6N006ATMA1 IAUC120N04S6N009ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 120A (Tj) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V 7V, 10V
Rds On (Max) @ Id, Vgs 0.6mOhm @ 60A, 10V 0.9mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 3V @ 130µA 3.4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 151 nC @ 10 V 115 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 10117 pF @ 25 V 7360 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 187W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-53 PG-TDSON-8-33
Package / Case 8-PowerTDFN 8-PowerTDFN

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