Infineon Technologies-IAUC120N04S6L012ATMA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40 V
Current - Continuous Drain (Id) @ 25°C:	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	1.21mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:	2V @ 60µA
Gate Charge (Qg) (Max) @ Vgs:	80 nC @ 10 V
Vgs (Max):	±16V
Input Capacitance (Ciss) (Max) @ Vds:	4832 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	115W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TDSON-8
Package / Case:	8-PowerTDFN

Infineon Technologies IAUC120N04S6L012ATMA1