IAUC100N04S6L025ATMA1
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Infineon Technologies IAUC100N04S6L025ATMA1

Manufacturer No:
IAUC100N04S6L025ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IAUC100N04S6L025ATMA1 Datasheet
ECAD Model:
-
Description:
IAUC100N04S6L025ATMA1
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.56mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 24µA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:2019 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):62W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8
Package / Case:8-PowerTDFN
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Similar Products

Part Number IAUC100N04S6L025ATMA1 IAUC100N04S6L020ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.56mOhm @ 50A, 10V 2.04mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 24µA 2V @ 32µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V 46 nC @ 10 V
Vgs (Max) ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 2019 pF @ 25 V 2744 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 62W (Tc) 75W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8 PG-TDSON-8
Package / Case 8-PowerTDFN 8-PowerTDFN

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