Infineon Technologies-FZ900R12KP4HOSA1 - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

Part Number	FZ900R12KP4HOSA1	FZ400R12KP4HOSA1	FZ600R12KP4HOSA1	FZ900R12KE4HOSA1
Manufacturer	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies
Product Status	Active	Active	Active	Active
IGBT Type	-	Trench Field Stop	Trench Field Stop	Trench Field Stop
Configuration	Single	Single	Single	Single
Voltage - Collector Emitter Breakdown (Max)	1200 V	1200 V	1200 V	1200 V
Current - Collector (Ic) (Max)	900 A	400 A	600 A	900 A
Power - Max	-	2400 W	-	4300 W
Vce(on) (Max) @ Vge, Ic	2.05V @ 15V, 900A	2.05V @ 15V, 400A	2.05V @ 15V, 600A	2.1V @ 15V, 900A
Current - Collector Cutoff (Max)	5 mA	5 mA	5 mA	5 mA
Input Capacitance (Cies) @ Vce	56 nF @ 25 V	28 nF @ 25 V	42 nF @ 25 V	56 nF @ 25 V
Input	Standard	Standard	Standard	Standard
NTC Thermistor	No	No	No	No
Operating Temperature	-40°C ~ 125°C	-40°C ~ 125°C	-40°C ~ 150°C	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount	Chassis Mount	Chassis Mount	Chassis Mount
Package / Case	Module	Module	Module	Module
Supplier Device Package	Module	Module	Module	Module

IGBT Type:	-
Configuration:	Single
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	900 A
Power - Max:	-
Vce(on) (Max) @ Vge, Ic:	2.05V @ 15V, 900A
Current - Collector Cutoff (Max):	5 mA
Input Capacitance (Cies) @ Vce:	56 nF @ 25 V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-40°C ~ 125°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

Infineon Technologies FZ900R12KP4HOSA1