Infineon Technologies-FZ800R45KL3B5NOSA2 - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

IGBT Type:	Trench Field Stop
Configuration:	Half Bridge
Voltage - Collector Emitter Breakdown (Max):	4500 V
Current - Collector (Ic) (Max):	1600 A
Power - Max:	9000 W
Vce(on) (Max) @ Vge, Ic:	2.85V @ 15V, 800A
Current - Collector Cutoff (Max):	5 mA
Input Capacitance (Cies) @ Vce:	3.1 nF @ 25 V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-50°C ~ 125°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

Infineon Technologies FZ800R45KL3B5NOSA2