Infineon Technologies-FZ2400R17HP4B2BOSA2 - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

Part Number	FZ2400R17HP4B2BOSA2	FZ2400R17HP4B28BOSA2	FZ2400R17HP4B29BOSA2
Manufacturer	Infineon Technologies	Infineon Technologies	Infineon Technologies
Product Status	Active	Active	Active
IGBT Type	Trench Field Stop	Trench Field Stop	Trench Field Stop
Configuration	Half Bridge	Single Switch	Single Switch
Voltage - Collector Emitter Breakdown (Max)	1700 V	1700 V	1700 V
Current - Collector (Ic) (Max)	4800 A	4800 A	4800 A
Power - Max	13000 W	15500 W	15500 W
Vce(on) (Max) @ Vge, Ic	2.25V @ 15V, 2400A	2.25V @ 15V, 2400A	2.25V @ 15V, 2400A
Current - Collector Cutoff (Max)	5 mA	5 mA	5 mA
Input Capacitance (Cies) @ Vce	195 nF @ 25 V	195 nF @ 25 V	195 nF @ 25 V
Input	Standard	Standard	Standard
NTC Thermistor	No	No	No
Operating Temperature	-40°C ~ 150°C	-40°C ~ 150°C	-40°C ~ 150°C
Mounting Type	Chassis Mount	Chassis Mount	Chassis Mount
Package / Case	Module	Module	Module
Supplier Device Package	Module	Module	Module

Infineon Technologies FZ2400R17HP4B2BOSA2

IGBT Type:	Trench Field Stop
Configuration:	Half Bridge
Voltage - Collector Emitter Breakdown (Max):	1700 V
Current - Collector (Ic) (Max):	4800 A
Power - Max:	13000 W
Vce(on) (Max) @ Vge, Ic:	2.25V @ 15V, 2400A
Current - Collector Cutoff (Max):	5 mA
Input Capacitance (Cies) @ Vce:	195 nF @ 25 V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-40°C ~ 150°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module