Infineon Technologies-FZ2000R33HE4BOSA1 - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

IGBT Type:	Trench Field Stop
Configuration:	Single Switch
Voltage - Collector Emitter Breakdown (Max):	3300 V
Current - Collector (Ic) (Max):	2000 A
Power - Max:	4.2 mW
Vce(on) (Max) @ Vge, Ic:	2.2V @ 15V, 2kA (Typ)
Current - Collector Cutoff (Max):	5 mA
Input Capacitance (Cies) @ Vce:	280 nF @ 25 V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	AG-IHVB190-3

Infineon Technologies FZ2000R33HE4BOSA1