Infineon Technologies-FZ1800R17HP4B9HOSA2 - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

Part Number	FZ1800R17HP4B9HOSA2	FZ1800R12HP4B9HOSA2	FZ1800R17HE4B9HOSA2
Manufacturer	Infineon Technologies	Infineon Technologies	Infineon Technologies
Product Status	Active	Active	Active
IGBT Type	Trench	Trench	-
Configuration	Single Switch	Single Switch	Single Switch
Voltage - Collector Emitter Breakdown (Max)	1700 V	1200 V	1700 V
Current - Collector (Ic) (Max)	1800 A	2700 A	1800 A
Power - Max	11500 W	10500 W	11500 W
Vce(on) (Max) @ Vge, Ic	2.25V @ 15V, 1800A	2.05V @ 15V, 1800A	2.3V @ 15V, 1800A
Current - Collector Cutoff (Max)	5 mA	5 mA	5 mA
Input Capacitance (Cies) @ Vce	145 nF @ 25 V	110 nF @ 25 V	145 nF @ 25 V
Input	Standard	Standard	Standard
NTC Thermistor	No	No	No
Operating Temperature	-40°C ~ 150°C	-40°C ~ 150°C	-40°C ~ 150°C
Mounting Type	Chassis Mount	Chassis Mount	Chassis Mount
Package / Case	Module	Module	Module
Supplier Device Package	Module	Module	Module

Infineon Technologies FZ1800R17HP4B9HOSA2

IGBT Type:	Trench
Configuration:	Single Switch
Voltage - Collector Emitter Breakdown (Max):	1700 V
Current - Collector (Ic) (Max):	1800 A
Power - Max:	11500 W
Vce(on) (Max) @ Vge, Ic:	2.25V @ 15V, 1800A
Current - Collector Cutoff (Max):	5 mA
Input Capacitance (Cies) @ Vce:	145 nF @ 25 V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-40°C ~ 150°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module