Infineon Technologies-FZ1800R12HP4B9HOSA2 - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

Part Number	FZ1800R12HP4B9HOSA2	FZ1800R17HP4B9HOSA2	FZ1800R12HE4B9HOSA2
Manufacturer	Infineon Technologies	Infineon Technologies	Infineon Technologies
Product Status	Active	Active	Active
IGBT Type	Trench	Trench	Trench Field Stop
Configuration	Single Switch	Single Switch	Single Switch
Voltage - Collector Emitter Breakdown (Max)	1200 V	1700 V	1200 V
Current - Collector (Ic) (Max)	2700 A	1800 A	2735 A
Power - Max	10500 W	11500 W	11000 W
Vce(on) (Max) @ Vge, Ic	2.05V @ 15V, 1800A	2.25V @ 15V, 1800A	2.1V @ 15V, 1800A
Current - Collector Cutoff (Max)	5 mA	5 mA	5 mA
Input Capacitance (Cies) @ Vce	110 nF @ 25 V	145 nF @ 25 V	110 nF @ 25 V
Input	Standard	Standard	Standard
NTC Thermistor	No	No	No
Operating Temperature	-40°C ~ 150°C	-40°C ~ 150°C	-40°C ~ 150°C
Mounting Type	Chassis Mount	Chassis Mount	Chassis Mount
Package / Case	Module	Module	Module
Supplier Device Package	Module	Module	Module

Infineon Technologies FZ1800R12HP4B9HOSA2

IGBT Type:	Trench
Configuration:	Single Switch
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	2700 A
Power - Max:	10500 W
Vce(on) (Max) @ Vge, Ic:	2.05V @ 15V, 1800A
Current - Collector Cutoff (Max):	5 mA
Input Capacitance (Cies) @ Vce:	110 nF @ 25 V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-40°C ~ 150°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module