Infineon Technologies-FZ1200R45KL3B5NOSA1 - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

IGBT Type:	-
Configuration:	Single
Voltage - Collector Emitter Breakdown (Max):	4500 V
Current - Collector (Ic) (Max):	1200 A
Power - Max:	13500 W
Vce(on) (Max) @ Vge, Ic:	2.85V @ 15V, 1200A
Current - Collector Cutoff (Max):	5 mA
Input Capacitance (Cies) @ Vce:	280 nF @ 25 V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-50°C ~ 125°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

Infineon Technologies FZ1200R45KL3B5NOSA1