Infineon Technologies-FZ1200R17HP4B2BOSA2 - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

Part Number	FZ1200R17HP4B2BOSA2	FZ1600R17HP4B2BOSA2
Manufacturer	Infineon Technologies	Infineon Technologies
Product Status	Active	Active
IGBT Type	Trench Field Stop	Trench Field Stop
Configuration	Half Bridge	Single Switch
Voltage - Collector Emitter Breakdown (Max)	1700 V	1700 V
Current - Collector (Ic) (Max)	1200 A	1600 A
Power - Max	7800 W	10500 W
Vce(on) (Max) @ Vge, Ic	2.25V @ 15V, 1200A	2.25V @ 15V, 1.6kA
Current - Collector Cutoff (Max)	5 mA	5 mA
Input Capacitance (Cies) @ Vce	97 nF @ 25 V	130 nF @ 25 V
Input	Standard	Standard
NTC Thermistor	No	No
Operating Temperature	-40°C ~ 150°C	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount	Chassis Mount
Package / Case	Module	Module
Supplier Device Package	Module	A-IHV130-3

Infineon Technologies FZ1200R17HP4B2BOSA2

IGBT Type:	Trench Field Stop
Configuration:	Half Bridge
Voltage - Collector Emitter Breakdown (Max):	1700 V
Current - Collector (Ic) (Max):	1200 A
Power - Max:	7800 W
Vce(on) (Max) @ Vge, Ic:	2.25V @ 15V, 1200A
Current - Collector Cutoff (Max):	5 mA
Input Capacitance (Cies) @ Vce:	97 nF @ 25 V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-40°C ~ 150°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module