Infineon Technologies-FZ1000R33HE3BPSA1 - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

Part Number	FZ1000R33HE3BPSA1	FZ1500R33HE3BPSA1	FZ1000R33HL3BPSA1	FZ1200R33HE3BPSA1
Manufacturer	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies
Product Status	Active	Active	Active	Active
IGBT Type	Trench Field Stop	Trench Field Stop	Trench Field Stop	Trench Field Stop
Configuration	Single Switch	Full Bridge	Single Switch	Full Bridge
Voltage - Collector Emitter Breakdown (Max)	3300 V	3300 V	3300 V	3300 V
Current - Collector (Ic) (Max)	1000 A	1500 A	1000 A	1200 A
Power - Max	-	17000 W	1600 W	13000 W
Vce(on) (Max) @ Vge, Ic	3.1V @ 15V, 100A	3.1V @ 15V, 1500A	2.85V @ 15V, 1000A	3.2V @ 15V, 1200A
Current - Collector Cutoff (Max)	5 mA	5 mA	5 mA	5 mA
Input Capacitance (Cies) @ Vce	190 nF @ 25 V	280 nF @ 25 V	190 nF @ 25 V	210 nF @ 25 V
Input	Standard	Standard	Standard	Standard
NTC Thermistor	No	No	No	No
Operating Temperature	-40°C ~ 150°C	-40°C ~ 150°C	-40°C ~ 150°C	-40°C ~ 150°C
Mounting Type	Chassis Mount	Chassis Mount	Chassis Mount	Chassis Mount
Package / Case	Module	Module	Module	Module
Supplier Device Package	Module	Module	Module	Module

IGBT Type:	Trench Field Stop
Configuration:	Single Switch
Voltage - Collector Emitter Breakdown (Max):	3300 V
Current - Collector (Ic) (Max):	1000 A
Power - Max:	-
Vce(on) (Max) @ Vge, Ic:	3.1V @ 15V, 100A
Current - Collector Cutoff (Max):	5 mA
Input Capacitance (Cies) @ Vce:	190 nF @ 25 V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-40°C ~ 150°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

Infineon Technologies FZ1000R33HE3BPSA1