FS50R12W1T7B11BOMA1
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Infineon Technologies FS50R12W1T7B11BOMA1

Manufacturer No:
FS50R12W1T7B11BOMA1
Manufacturer:
Infineon Technologies
Package:
Tray
Datasheet:
FS50R12W1T7B11BOMA1 Datasheet
ECAD Model:
-
Description:
IGBT MODULE LOW POWER EASY
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

IGBT Type:- 
Configuration:- 
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):50 A
Power - Max:- 
Vce(on) (Max) @ Vge, Ic:- 
Current - Collector Cutoff (Max):7.9 µA
Input Capacitance (Cies) @ Vce:11.1 nF @ 25 V
Input:- 
NTC Thermistor:No
Operating Temperature:-40°C ~ 175°C
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
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In Stock

$56.50
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Similar Products

Part Number FS50R12W1T7B11BOMA1 FS50R12W2T7B11BOMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
IGBT Type - Trench Field Stop
Configuration - Full Bridge
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V
Current - Collector (Ic) (Max) 50 A 50 A
Power - Max - 20 mW
Vce(on) (Max) @ Vge, Ic - 1.5V @ 15V, 50A (Typ)
Current - Collector Cutoff (Max) 7.9 µA 7.9 µA
Input Capacitance (Cies) @ Vce 11.1 nF @ 25 V 11.1 nF @ 25 V
Input - Standard
NTC Thermistor No No
Operating Temperature -40°C ~ 175°C -40°C ~ 175°C
Mounting Type Chassis Mount Chassis Mount
Package / Case Module Module
Supplier Device Package Module Module

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