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| Part Number | FS45MR12W1M1B11BOMA1 | FF45MR12W1M1B11BOMA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Status | Last Time Buy | Last Time Buy |
| FET Type | 6 N-Channel (3-Phase Bridge) | 2 N-Channel (Dual) |
| FET Feature | Silicon Carbide (SiC) | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tj) | 25A (Tj) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 25A, 15V (Typ) | 45mOhm @ 25A, 15V (Typ) |
| Vgs(th) (Max) @ Id | 5.55V @ 10mA | 5.55V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 62nC @ 15V | 62nC @ 15V |
| Input Capacitance (Ciss) (Max) @ Vds | 1840pF @ 800V | 1840pF @ 800V |
| Power - Max | 20mW (Tc) | 20mW (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount | Chassis Mount |
| Package / Case | Module | Module |
| Supplier Device Package | AG-EASY1BM-2 | AG-EASY1BM-2 |
