Infineon Technologies-FS35R12KE3GBPSA1 - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

IGBT Type:	-
Configuration:	Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	55 A
Power - Max:	200 W
Vce(on) (Max) @ Vge, Ic:	2.15V @ 15V, 35A
Current - Collector Cutoff (Max):	5 mA
Input Capacitance (Cies) @ Vce:	2.5 nF @ 25 V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 125°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	AG-ECONO2B

Infineon Technologies FS35R12KE3GBPSA1