Infineon Technologies-FS200R12PT4BOSA1 - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

Part Number	FS200R12PT4BOSA1	FS200R12PT4PBOSA1	FS100R12PT4BOSA1
Manufacturer	Infineon Technologies	Infineon Technologies	Infineon Technologies
Product Status	Active	Active	Active
IGBT Type	Trench Field Stop	Trench Field Stop	Trench Field Stop
Configuration	Three Phase Inverter	Full Bridge	Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max)	1200 V	1200 V	1200 V
Current - Collector (Ic) (Max)	280 A	200 A	135 A
Power - Max	1000 W	20 mW	500 W
Vce(on) (Max) @ Vge, Ic	2.15V @ 15V, 200A	2.15V @ 15V, 200A	2.15V @ 15V, 100A
Current - Collector Cutoff (Max)	1 mA	1 mA	1 mA
Input Capacitance (Cies) @ Vce	14 nF @ 25 V	14 nF @ 25 V	6.3 nF @ 25 V
Input	Standard	Standard	Standard
NTC Thermistor	Yes	Yes	Yes
Operating Temperature	-40°C ~ 150°C	-40°C ~ 150°C	-40°C ~ 150°C
Mounting Type	Chassis Mount	Chassis Mount	Chassis Mount
Package / Case	Module	Module	Module
Supplier Device Package	Module	Module	Module

Infineon Technologies FS200R12PT4BOSA1

IGBT Type:	Trench Field Stop
Configuration:	Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	280 A
Power - Max:	1000 W
Vce(on) (Max) @ Vge, Ic:	2.15V @ 15V, 200A
Current - Collector Cutoff (Max):	1 mA
Input Capacitance (Cies) @ Vce:	14 nF @ 25 V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 150°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module