Infineon Technologies-FS200R12KT4RB11BOSA1 - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

IGBT Type:	-
Configuration:	Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	280 A
Power - Max:	1000 W
Vce(on) (Max) @ Vge, Ic:	2.15V @ 15V, 200A
Current - Collector Cutoff (Max):	1 mA
Input Capacitance (Cies) @ Vce:	14 nF @ 25 V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 150°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

Infineon Technologies FS200R12KT4RB11BOSA1