Infineon Technologies-FF900R12ME7PB11BPSA1 - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

IGBT Type:	Trench Field Stop
Configuration:	Half Bridge
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	900 A
Power - Max:	-
Vce(on) (Max) @ Vge, Ic:	1.8V @ 15V, 900A
Current - Collector Cutoff (Max):	100 µA
Input Capacitance (Cies) @ Vce:	122 nF @ 25 V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-40°C ~ 175°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	AG-ECONOD

Infineon Technologies FF900R12ME7PB11BPSA1