Infineon Technologies-FF900R12IE4BOSA1 - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

Part Number	FF900R12IE4BOSA1	FF900R12IE4PBOSA1	FF900R12IE4VBOSA1	FF600R12IE4BOSA1
Manufacturer	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies
Product Status	Active	Active	Not For New Designs	Active
IGBT Type	Trench Field Stop	Trench Field Stop	Trench Field Stop	Trench Field Stop
Configuration	Single	Half Bridge	2 Independent	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	1200 V	1200 V	1200 V	1200 V
Current - Collector (Ic) (Max)	900 A	900 A	900 A	600 A
Power - Max	5100 W	20 mW	5100 W	3350 W
Vce(on) (Max) @ Vge, Ic	2.05V @ 15V, 900A	2.1V @ 15V, 900A	2.05V @ 15V, 900A	2.05V @ 15V, 600A
Current - Collector Cutoff (Max)	5 mA	5 mA	5 mA	5 mA
Input Capacitance (Cies) @ Vce	54 nF @ 25 V	54 nF @ 25 V	54 nF @ 25 V	37 nF @ 25 V
Input	Standard	Standard	Standard	Standard
NTC Thermistor	Yes	Yes	Yes	Yes
Operating Temperature	-40°C ~ 150°C (TJ)	-40°C ~ 150°C	-40°C ~ 150°C	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount	Chassis Mount	Chassis Mount	Chassis Mount
Package / Case	Module	Module	Module	Module
Supplier Device Package	Module	Module	Module	Module

Infineon Technologies FF900R12IE4BOSA1

IGBT Type:	Trench Field Stop
Configuration:	Single
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	900 A
Power - Max:	5100 W
Vce(on) (Max) @ Vge, Ic:	2.05V @ 15V, 900A
Current - Collector Cutoff (Max):	5 mA
Input Capacitance (Cies) @ Vce:	54 nF @ 25 V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module