Infineon Technologies-FF750R17ME7DB11BPSA1 - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

IGBT Type:	Trench Field Stop
Configuration:	Half Bridge Inverter
Voltage - Collector Emitter Breakdown (Max):	1700 V
Current - Collector (Ic) (Max):	750 A
Power - Max:	20 mW
Vce(on) (Max) @ Vge, Ic:	1.85V @ 15V, 750A
Current - Collector Cutoff (Max):	5 mA
Input Capacitance (Cies) @ Vce:	78.1 nF @ 25 V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	-

Infineon Technologies FF750R17ME7DB11BPSA1