FF6MR12W2M1B11BOMA1
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Infineon Technologies FF6MR12W2M1B11BOMA1

Manufacturer No:
FF6MR12W2M1B11BOMA1
Manufacturer:
Infineon Technologies
Package:
Tray
Datasheet:
FF6MR12W2M1B11BOMA1 Datasheet
ECAD Model:
-
Description:
MOSFET MODULE 1200V 200A
Delivery:
Payment:
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Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:200A (Tj)
Rds On (Max) @ Id, Vgs:5.63mOhm @ 200A, 15V
Vgs(th) (Max) @ Id:5.55V @ 80mA
Gate Charge (Qg) (Max) @ Vgs:496nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds:14700pF @ 800V
Power - Max:20mW (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:AG-EASY2BM-2
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$413.81
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Similar Products

Part Number FF6MR12W2M1B11BOMA1 FF8MR12W2M1B11BOMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Last Time Buy Last Time Buy
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Silicon Carbide (SiC) Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) 1200V (1.2kV) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 200A (Tj) 150A (Tj)
Rds On (Max) @ Id, Vgs 5.63mOhm @ 200A, 15V 7.5mOhm @ 150A, 15V (Typ)
Vgs(th) (Max) @ Id 5.55V @ 80mA 5.55V @ 60mA
Gate Charge (Qg) (Max) @ Vgs 496nC @ 15V 372nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds 14700pF @ 800V 11000pF @ 800V
Power - Max 20mW (Tc) 20mW (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount Chassis Mount
Package / Case Module Module
Supplier Device Package AG-EASY2BM-2 AG-EASY2BM-2

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