FF45MR12W1M1B11BOMA1
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Infineon Technologies FF45MR12W1M1B11BOMA1

Manufacturer No:
FF45MR12W1M1B11BOMA1
Manufacturer:
Infineon Technologies
Package:
Tray
Datasheet:
FF45MR12W1M1B11BOMA1 Datasheet
ECAD Model:
-
Description:
MOSFET MODULE 1200V 50A
Delivery:
Payment:
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Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:25A (Tj)
Rds On (Max) @ Id, Vgs:45mOhm @ 25A, 15V (Typ)
Vgs(th) (Max) @ Id:5.55V @ 10mA
Gate Charge (Qg) (Max) @ Vgs:62nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds:1840pF @ 800V
Power - Max:20mW (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:AG-EASY1BM-2
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$80.74
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Similar Products

Part Number FF45MR12W1M1B11BOMA1 FS45MR12W1M1B11BOMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Last Time Buy Last Time Buy
FET Type 2 N-Channel (Dual) 6 N-Channel (3-Phase Bridge)
FET Feature Silicon Carbide (SiC) Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) 1200V (1.2kV) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 25A (Tj) 25A (Tj)
Rds On (Max) @ Id, Vgs 45mOhm @ 25A, 15V (Typ) 45mOhm @ 25A, 15V (Typ)
Vgs(th) (Max) @ Id 5.55V @ 10mA 5.55V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 62nC @ 15V 62nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds 1840pF @ 800V 1840pF @ 800V
Power - Max 20mW (Tc) 20mW (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount Chassis Mount
Package / Case Module Module
Supplier Device Package AG-EASY1BM-2 AG-EASY1BM-2

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