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FF23MR12W1M1B11BOMA1
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Infineon Technologies FF23MR12W1M1B11BOMA1

Manufacturer No:
FF23MR12W1M1B11BOMA1
Manufacturer:
Infineon Technologies
Package:
Tray
Datasheet:
FF23MR12W1M1B11BOMA1 Datasheet
ECAD Model:
-
Description:
MOSFET 2 N-CH 1200V 50A MODULE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:50A
Rds On (Max) @ Id, Vgs:23mOhm @ 50A, 15V
Vgs(th) (Max) @ Id:5.55V @ 20mA
Gate Charge (Qg) (Max) @ Vgs:125nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds:3950pF @ 800V
Power - Max:20mW
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
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In Stock

$124.57
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