Infineon Technologies-FF200R12KS4PHOSA1 - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

Part Number	FF200R12KS4PHOSA1	FF300R12KS4PHOSA1	FF200R12KE4PHOSA1	FF200R12KS4HOSA1
Manufacturer	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies
Product Status	Active	Active	Active	Active
IGBT Type	-	-	Trench Field Stop	-
Configuration	Half Bridge	Half Bridge Inverter	Half Bridge	2 Independent
Voltage - Collector Emitter Breakdown (Max)	1200 V	1200 V	1200 V	1200 V
Current - Collector (Ic) (Max)	275 A	300 A	200 A	275 A
Power - Max	1400 W	-	-	1400 W
Vce(on) (Max) @ Vge, Ic	3.7V @ 15V, 200A	3.75V @ 15V, 300A	2.15V @ 15V, 200A	3.7V @ 15V, 200A
Current - Collector Cutoff (Max)	5 mA	5 mA	5 mA	5 mA
Input Capacitance (Cies) @ Vce	13 nF @ 25 V	20 nF @ 25 V	14 nF @ 25 V	13 nF @ 25 V
Input	Standard	Standard	Standard	Standard
NTC Thermistor	No	No	No	No
Operating Temperature	-40°C ~ 125°C	-40°C ~ 125°C	-40°C ~ 150°C	-40°C ~ 125°C
Mounting Type	Chassis Mount	Chassis Mount	Chassis Mount	Chassis Mount
Package / Case	Module	Module	Module	Module
Supplier Device Package	Module	Module	Module	Module

IGBT Type:	-
Configuration:	Half Bridge
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	275 A
Power - Max:	1400 W
Vce(on) (Max) @ Vge, Ic:	3.7V @ 15V, 200A
Current - Collector Cutoff (Max):	5 mA
Input Capacitance (Cies) @ Vce:	13 nF @ 25 V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-40°C ~ 125°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

Infineon Technologies FF200R12KS4PHOSA1