Infineon Technologies-FF200R12KE4PHOSA1 - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

Part Number	FF200R12KE4PHOSA1	FF200R12KS4PHOSA1	FF300R12KE4PHOSA1	FF200R12KE4HOSA1
Manufacturer	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies
Product Status	Active	Active	Active	Active
IGBT Type	Trench Field Stop	-	Trench Field Stop	Trench Field Stop
Configuration	Half Bridge	Half Bridge	Half Bridge Inverter	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	1200 V	1200 V	1200 V	1200 V
Current - Collector (Ic) (Max)	200 A	275 A	300 A	240 A
Power - Max	-	1400 W	-	1100 W
Vce(on) (Max) @ Vge, Ic	2.15V @ 15V, 200A	3.7V @ 15V, 200A	2.15V @ 15V, 300A	2.15V @ 15V, 200A
Current - Collector Cutoff (Max)	5 mA	5 mA	5 mA	5 mA
Input Capacitance (Cies) @ Vce	14 nF @ 25 V	13 nF @ 25 V	19 nF @ 25 V	14 nF @ 25 V
Input	Standard	Standard	Standard	Standard
NTC Thermistor	No	No	No	No
Operating Temperature	-40°C ~ 150°C	-40°C ~ 125°C	-40°C ~ 150°C	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount	Chassis Mount	Chassis Mount	Chassis Mount
Package / Case	Module	Module	Module	Module
Supplier Device Package	Module	Module	Module	Module

IGBT Type:	Trench Field Stop
Configuration:	Half Bridge
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	200 A
Power - Max:	-
Vce(on) (Max) @ Vge, Ic:	2.15V @ 15V, 200A
Current - Collector Cutoff (Max):	5 mA
Input Capacitance (Cies) @ Vce:	14 nF @ 25 V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-40°C ~ 150°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

Infineon Technologies FF200R12KE4PHOSA1