FF150R12ME3GBOSA1
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Infineon Technologies FF150R12ME3GBOSA1

Manufacturer No:
FF150R12ME3GBOSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
FF150R12ME3GBOSA1 Datasheet
ECAD Model:
-
Description:
IGBT MOD 1200V 200A 695W
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

IGBT Type:Trench Field Stop
Configuration:Half Bridge
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):200 A
Power - Max:695 W
Vce(on) (Max) @ Vge, Ic:2.15V @ 15V, 150A
Current - Collector Cutoff (Max):5 mA
Input Capacitance (Cies) @ Vce:10.5 nF @ 25 V
Input:Standard
NTC Thermistor:Yes
Operating Temperature:-40°C ~ 125°C
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
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$96.87
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Similar Products

Part Number FF150R12ME3GBOSA1 FF150R17ME3GBOSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs
IGBT Type Trench Field Stop Trench Field Stop
Configuration Half Bridge 2 Independent
Voltage - Collector Emitter Breakdown (Max) 1200 V 1700 V
Current - Collector (Ic) (Max) 200 A 240 A
Power - Max 695 W 1050 W
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 150A 2.45V @ 15V, 150A
Current - Collector Cutoff (Max) 5 mA 3 mA
Input Capacitance (Cies) @ Vce 10.5 nF @ 25 V 13.5 nF @ 25 V
Input Standard Standard
NTC Thermistor Yes Yes
Operating Temperature -40°C ~ 125°C -40°C ~ 125°C
Mounting Type Chassis Mount Chassis Mount
Package / Case Module Module
Supplier Device Package Module Module

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