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FF11MR12W1M1PB11BPSA1
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Infineon Technologies FF11MR12W1M1PB11BPSA1

Manufacturer No:
FF11MR12W1M1PB11BPSA1
Manufacturer:
Infineon Technologies
Package:
Tray
Datasheet:
FF11MR12W1M1PB11BPSA1 Datasheet
ECAD Model:
-
Description:
MOSFET MODULE 1200V DUAL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:100A (Tj)
Rds On (Max) @ Id, Vgs:11.3mOhm @ 100A, 15V
Vgs(th) (Max) @ Id:5.55V @ 40mA
Gate Charge (Qg) (Max) @ Vgs:248nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds:7360pF @ 800V
Power - Max:20mW
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:AG-EASY1B-2
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$233.06
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