Infineon Technologies-FD200R12KE3HOSA1 - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

Part Number	FD200R12KE3HOSA1	FF200R12KE3HOSA1	FD300R12KE3HOSA1	FD200R12KE3PHOSA1	FD400R12KE3HOSA1
Manufacturer	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies
Product Status	Active	Active	Active	Active	Active
IGBT Type	Trench Field Stop	-	-	Trench Field Stop	Trench Field Stop
Configuration	Single Chopper	2 Independent	Single	Single	Single Chopper
Voltage - Collector Emitter Breakdown (Max)	1200 V	1200 V	1200 V	1200 V	1200 V
Current - Collector (Ic) (Max)	-	-	480 A	200 A	580 A
Power - Max	1050 W	1050 W	1470 W	-	2000 W
Vce(on) (Max) @ Vge, Ic	2.15V @ 15V, 200A	2.15V @ 15V, 200A	2.15V @ 15V, 300A	2.15V @ 15V, 200A	2.15V @ 15V, 400A
Current - Collector Cutoff (Max)	5 mA	5 mA	5 mA	5 mA	5 mA
Input Capacitance (Cies) @ Vce	14 nF @ 25 V	14 nF @ 25 V	21 nF @ 25 V	14 nF @ 25 V	28 nF @ 25 V
Input	Standard	Standard	Standard	Standard	Standard
NTC Thermistor	No	Yes	No	No	No
Operating Temperature	-40°C ~ 125°C	-40°C ~ 125°C	-40°C ~ 125°C	-40°C ~ 125°C	-40°C ~ 125°C
Mounting Type	Chassis Mount	Chassis Mount	Chassis Mount	Chassis Mount	Chassis Mount
Package / Case	Module	Module	Module	Module	Module
Supplier Device Package	Module	Module	Module	Module	Module

IGBT Type:	Trench Field Stop
Configuration:	Single Chopper
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	-
Power - Max:	1050 W
Vce(on) (Max) @ Vge, Ic:	2.15V @ 15V, 200A
Current - Collector Cutoff (Max):	5 mA
Input Capacitance (Cies) @ Vce:	14 nF @ 25 V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-40°C ~ 125°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

Infineon Technologies FD200R12KE3HOSA1