Infineon Technologies-F411MR12W2M1B76BOMA1 - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	4 N-Channel (Half Bridge)
FET Feature:	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:	100A (Tj)
Rds On (Max) @ Id, Vgs:	11.3mOhm @ 100A, 15V
Vgs(th) (Max) @ Id:	5.55V @ 40mA
Gate Charge (Qg) (Max) @ Vgs:	248nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds:	7.36nF @ 800V
Power - Max:	-
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	AG-EASY1B-2

Infineon Technologies F411MR12W2M1B76BOMA1