F4100R12KS4BOSA1
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Infineon Technologies F4100R12KS4BOSA1

Manufacturer No:
F4100R12KS4BOSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
F4100R12KS4BOSA1 Datasheet
ECAD Model:
-
Description:
IGBT MOD 1200V 130A 660W
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

IGBT Type:- 
Configuration:Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):130 A
Power - Max:660 W
Vce(on) (Max) @ Vge, Ic:3.75V @ 15V, 100A
Current - Collector Cutoff (Max):5 mA
Input Capacitance (Cies) @ Vce:6.8 nF @ 25 V
Input:Standard
NTC Thermistor:Yes
Operating Temperature:-40°C ~ 125°C
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
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In Stock

$156.34
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Similar Products

Part Number F4100R12KS4BOSA1 F4150R12KS4BOSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
IGBT Type - -
Configuration Three Phase Inverter Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V
Current - Collector (Ic) (Max) 130 A 180 A
Power - Max 660 W 960 W
Vce(on) (Max) @ Vge, Ic 3.75V @ 15V, 100A 3.75V @ 15V, 150A
Current - Collector Cutoff (Max) 5 mA 5 mA
Input Capacitance (Cies) @ Vce 6.8 nF @ 25 V 10 nF @ 25 V
Input Standard Standard
NTC Thermistor Yes Yes
Operating Temperature -40°C ~ 125°C -40°C ~ 125°C
Mounting Type Chassis Mount Chassis Mount
Package / Case Module Module
Supplier Device Package Module Module

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