Infineon Technologies-F3L25R12W1T4B27BOMA1 - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

IGBT Type:	-
Configuration:	Half Bridge
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	45 A
Power - Max:	215 W
Vce(on) (Max) @ Vge, Ic:	2.25V @ 15V, 25A
Current - Collector Cutoff (Max):	1 mA
Input Capacitance (Cies) @ Vce:	1.45 nF @ 25 V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	AG-EASY1B

Infineon Technologies F3L25R12W1T4B27BOMA1