Infineon Technologies-F3L11MR12W2M1B65BOMA1 - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

IGBT Type:	Trench
Configuration:	Three Level Inverter
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	100 A
Power - Max:	0.2 W
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 100A
Current - Collector Cutoff (Max):	40 µA
Input Capacitance (Cies) @ Vce:	7.36 nF @ 800 V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	AG-EASY2BM-2

Infineon Technologies F3L11MR12W2M1B65BOMA1