Infineon Technologies-DF80R12W2H3FB11BPSA1 - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

IGBT Type:	Trench Field Stop
Configuration:	Half Bridge
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	20 A
Power - Max:	20 mW
Vce(on) (Max) @ Vge, Ic:	1.7V @ 15V, 20A
Current - Collector Cutoff (Max):	1 mA
Input Capacitance (Cies) @ Vce:	2.35 nF @ 25 V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

Infineon Technologies DF80R12W2H3FB11BPSA1