Infineon Technologies-DF650R17IE4BOSA1 - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

IGBT Type:	-
Configuration:	Single
Voltage - Collector Emitter Breakdown (Max):	1700 V
Current - Collector (Ic) (Max):	930 A
Power - Max:	4150 W
Vce(on) (Max) @ Vge, Ic:	2.45V @ 15V, 650A
Current - Collector Cutoff (Max):	5 mA
Input Capacitance (Cies) @ Vce:	54 nF @ 25 V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 150°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

Infineon Technologies DF650R17IE4BOSA1