Infineon Technologies-DF200R12W1H3B27BOMA1 - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

IGBT Type:	-
Configuration:	2 Independent
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	30 A
Power - Max:	375 W
Vce(on) (Max) @ Vge, Ic:	1.3V @ 15V, 30A
Current - Collector Cutoff (Max):	1 mA
Input Capacitance (Cies) @ Vce:	2 nF @ 25 V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 150°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

Infineon Technologies DF200R12W1H3B27BOMA1