DF100R07W1H5FPB53BPSA2
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Infineon Technologies DF100R07W1H5FPB53BPSA2

Manufacturer No:
DF100R07W1H5FPB53BPSA2
Manufacturer:
Infineon Technologies
Package:
Tray
Datasheet:
DF100R07W1H5FPB53BPSA2 Datasheet
ECAD Model:
-
Description:
IGBT MOD 650V 40A 20MW
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

IGBT Type:Trench Field Stop
Configuration:2 Independent
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):40 A
Power - Max:20 mW
Vce(on) (Max) @ Vge, Ic:1.55V @ 15V, 25A
Current - Collector Cutoff (Max):40 µA
Input Capacitance (Cies) @ Vce:2.8 nF @ 25 V
Input:Standard
NTC Thermistor:Yes
Operating Temperature:-40°C ~ 150°C
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
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In Stock

$66.70
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Similar Products

Part Number DF100R07W1H5FPB53BPSA2 DF100R07W1H5FPB54BPSA2  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
IGBT Type Trench Field Stop Trench Field Stop
Configuration 2 Independent 2 Independent
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V
Current - Collector (Ic) (Max) 40 A 40 A
Power - Max 20 mW 20 mW
Vce(on) (Max) @ Vge, Ic 1.55V @ 15V, 25A 1.55V @ 15V, 25A
Current - Collector Cutoff (Max) 40 µA 40 µA
Input Capacitance (Cies) @ Vce 2.8 nF @ 25 V 2.8 nF @ 25 V
Input Standard Standard
NTC Thermistor Yes Yes
Operating Temperature -40°C ~ 150°C -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount Chassis Mount
Package / Case Module Module
Supplier Device Package Module Module

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