Infineon Technologies-DDB2U30N08VRBOMA1307 - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

IGBT Type:	-
Configuration:	3 Independent
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	25 A
Power - Max:	20 mW
Vce(on) (Max) @ Vge, Ic:	2.55V @ 15V, 20A
Current - Collector Cutoff (Max):	1 mA
Input Capacitance (Cies) @ Vce:	880 pF @ 25 V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 125°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

Infineon Technologies DDB2U30N08VRBOMA1307