Infineon Technologies-DD1200S12H4HOSA1 - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

IGBT Type:	-
Configuration:	2 Independent
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	1200 A
Power - Max:	1200000 W
Vce(on) (Max) @ Vge, Ic:	2.35V @ 15V, 1200A
Current - Collector Cutoff (Max):	-
Input Capacitance (Cies) @ Vce:	-
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-40°C ~ 150°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

Infineon Technologies DD1200S12H4HOSA1