D850N30TXPSA1
  • Share:

Infineon Technologies D850N30TXPSA1

Manufacturer No:
D850N30TXPSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
D850N30TXPSA1 Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 3KV 850A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):3000 V
Current - Average Rectified (Io):850A
Voltage - Forward (Vf) (Max) @ If:1.28 V @ 850 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:50 mA @ 3000 V
Capacitance @ Vr, F:- 
Mounting Type:Chassis Mount
Package / Case:DO-200AB, B-PUK
Supplier Device Package:- 
Operating Temperature - Junction:-40°C ~ 160°C
0 Remaining View Similar

In Stock

-
420

Please send RFQ , we will respond immediately.

Similar Products

Part Number D850N30TXPSA1 D850N32TXPSA1   D850N34TXPSA1   D850N36TXPSA1   D850N40TXPSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 3000 V 3200 V 3400 V 3600 V 4000 V
Current - Average Rectified (Io) 850A 850A 850A 850A 850A
Voltage - Forward (Vf) (Max) @ If 1.28 V @ 850 A 1.28 V @ 850 A 1.28 V @ 850 A 1.28 V @ 850 A 1.28 V @ 850 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 50 mA @ 3000 V 50 mA @ 3200 V 50 mA @ 3400 V 50 mA @ 3600 V 50 mA @ 4000 V
Capacitance @ Vr, F - - - - -
Mounting Type Chassis Mount Chassis Mount Chassis Mount Chassis Mount Chassis Mount
Package / Case DO-200AB, B-PUK DO-200AB, B-PUK DO-200AB, B-PUK DO-200AB, B-PUK DO-200AB, B-PUK
Supplier Device Package - - - - -
Operating Temperature - Junction -40°C ~ 160°C -40°C ~ 160°C -40°C ~ 160°C -40°C ~ 160°C -40°C ~ 160°C

Related Product By Categories

NTE125
NTE125
NTE Electronics, Inc
R-SI 1000V 1A DO-41
MBRD6100CT-TP
MBRD6100CT-TP
Micro Commercial Co
6A,100V,SCHOTTKY,DPAK PACKAGE
NS8KT-E3/45
NS8KT-E3/45
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 8A TO220AC
SB140-E3/54
SB140-E3/54
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 1A DO204AL
MURS320-13-F
MURS320-13-F
Diodes Incorporated
DIODE GEN PURP 200V 3A SMC
GC10MPS12-252
GC10MPS12-252
GeneSiC Semiconductor
SIC DIODE 1200V 10A TO-252-2
G5S06508PT
G5S06508PT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 8A 2-PIN
HER152G A0G
HER152G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1.5A DO204AC
SF37GHA0G
SF37GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 3A DO201AD
BAS21J/ZLF
BAS21J/ZLF
Nexperia USA Inc.
DIODE GEN PURP 300V 250MA SC90
R1800-TP
R1800-TP
Micro Commercial Co
DIODE GEN PURP 1.8KV 500MA DO41
UGF8JD
UGF8JD
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 8A ITO220AC

Related Product By Brand

BCP54E6327
BCP54E6327
Infineon Technologies
TRANS NPN 45V 1A SOT223
SPB02N60C3
SPB02N60C3
Infineon Technologies
N-CHANNEL POWER MOSFET
IPB90N06S4L04ATMA2
IPB90N06S4L04ATMA2
Infineon Technologies
MOSFET N-CH 60V 90A TO263-3
IPP048N12N3GXKSA1
IPP048N12N3GXKSA1
Infineon Technologies
MOSFET N-CH 120V 100A TO220-3
IPB19DP10NMATMA1
IPB19DP10NMATMA1
Infineon Technologies
TRENCH >=100V PG-TO263-3
IPI60R380C6XKSA1
IPI60R380C6XKSA1
Infineon Technologies
MOSFET N-CH 600V 10.6A TO262-3
IRF3707ZCL
IRF3707ZCL
Infineon Technologies
MOSFET N-CH 30V 59A TO262
FP75R12N2T4B11BPSA1
FP75R12N2T4B11BPSA1
Infineon Technologies
IGBT MODULE LOW POWER ECONO
IRS20957SPBF
IRS20957SPBF
Infineon Technologies
IC AMP CLASS D MONO 16SOIC
IPS021LTR
IPS021LTR
Infineon Technologies
IC PWR DRIVER N-CHAN 1:1 SOT223
S25FS512SDSNFI013
S25FS512SDSNFI013
Infineon Technologies
IC FLASH 512MBIT SPI/QUAD 8WSON
STK14D88-RF25TR
STK14D88-RF25TR
Infineon Technologies
IC NVSRAM 256KBIT PAR 48SSOP