D770N12TXPSA1
  • Share:

Infineon Technologies D770N12TXPSA1

Manufacturer No:
D770N12TXPSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
D770N12TXPSA1 Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 1.2KV 770A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):770A
Voltage - Forward (Vf) (Max) @ If:1.08 V @ 400 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:30 mA @ 1200 V
Capacitance @ Vr, F:- 
Mounting Type:Chassis Mount
Package / Case:DO-200AA, A-PUK
Supplier Device Package:- 
Operating Temperature - Junction:-40°C ~ 180°C
0 Remaining View Similar

In Stock

-
246

Please send RFQ , we will respond immediately.

Similar Products

Part Number D770N12TXPSA1 D770N14TXPSA1   D770N16TXPSA1   D770N18TXPSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1200 V 1400 V 1600 V 1800 V
Current - Average Rectified (Io) 770A 770A 770A 770A
Voltage - Forward (Vf) (Max) @ If 1.08 V @ 400 A 1.08 V @ 400 A 1.08 V @ 400 A 1.08 V @ 400 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - -
Current - Reverse Leakage @ Vr 30 mA @ 1200 V 30 mA @ 1400 V 30 mA @ 1600 V 30 mA @ 1800 V
Capacitance @ Vr, F - - - -
Mounting Type Chassis Mount Chassis Mount Chassis Mount Chassis Mount
Package / Case DO-200AA, A-PUK DO-200AA, A-PUK DO-200AA, A-PUK DO-200AA, A-PUK
Supplier Device Package - - - -
Operating Temperature - Junction -40°C ~ 180°C -40°C ~ 180°C -40°C ~ 180°C -40°C ~ 180°C

Related Product By Categories

PMEG2005AESFCYL
PMEG2005AESFCYL
Nexperia USA Inc.
PMEG2005AESF - 20V, 0.5A LOW VF
SS1060XFL_R1_00001
SS1060XFL_R1_00001
Panjit International Inc.
EXTREME LOW VF SCHOTTKY BARRIER
NTE6037
NTE6037
NTE Electronics, Inc
R-600V 85A FAST REC AK
HS3M
HS3M
SURGE
3A -1000V - SMC (DO-214AB) - REC
MCL103C-TR3
MCL103C-TR3
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 20V 200MA MICMELF
SD103CWS-HE3-18
SD103CWS-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 350MA 20V SOD323
STPS1L40UY
STPS1L40UY
STMicroelectronics
DIODE SCHOTTKY 40V 1A SMB
MBR8170TFSTBG
MBR8170TFSTBG
onsemi
170V 8A SCHOTTKY
FFPF15S60STU
FFPF15S60STU
onsemi
DIODE GEN PURP 600V 15A TO220F
RGP30K-E3/73
RGP30K-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 3A DO201AD
SBR05U40CSP-7
SBR05U40CSP-7
Diodes Incorporated
DIODE SBR 40V 500MA WLB1006
1N4004W
1N4004W
Rectron USA
DIODE GEN 1A 400V SOD-123F

Related Product By Brand

BAR 88-02V E6127
BAR 88-02V E6127
Infineon Technologies
RF DIODE PIN 80V 250MW SC79-2
MMBTA42LT1HTSA1
MMBTA42LT1HTSA1
Infineon Technologies
TRANS NPN 300V 0.5A SOT23
BSC190N15NS3GATMA1
BSC190N15NS3GATMA1
Infineon Technologies
MOSFET N-CH 150V 50A TDSON-8-1
IPB020N10N5LFATMA1
IPB020N10N5LFATMA1
Infineon Technologies
MOSFET N-CH 100V 120A TO263-3
IPZ65R019C7XKSA1
IPZ65R019C7XKSA1
Infineon Technologies
MOSFET N-CH 650V 75A TO247-4
IPD60R360PFD7SAUMA1
IPD60R360PFD7SAUMA1
Infineon Technologies
MOSFET N-CH 650V 10A TO252-3
SN7002WH6433
SN7002WH6433
Infineon Technologies
SMALL SIGNAL FIELD-EFFECT TRANSI
XE164K96F66LACFXQMA1
XE164K96F66LACFXQMA1
Infineon Technologies
IC MCU 16BIT 768KB FLASH 100LQFP
XMC4100F64K128ABXQSA1
XMC4100F64K128ABXQSA1
Infineon Technologies
IC MCU 32BIT 128KB FLASH 64LQFP
CY8C4024AXI-S412
CY8C4024AXI-S412
Infineon Technologies
IC MCU 32BIT 16KB FLASH 32TQFP
CY39C031WQN-G-221-JNEFE1
CY39C031WQN-G-221-JNEFE1
Infineon Technologies
IC REG TRPL BUCK/LNR SYNC 28QFN
CYW20715A1KUBXGT
CYW20715A1KUBXGT
Infineon Technologies
IC RF TXRX+MCU BLUETOOTH 42UFBGA