D740N42TXPSA1
  • Share:

Infineon Technologies D740N42TXPSA1

Manufacturer No:
D740N42TXPSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
D740N42TXPSA1 Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 4.2KV 750A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):4200 V
Current - Average Rectified (Io):750A
Voltage - Forward (Vf) (Max) @ If:1.45 V @ 700 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:70 mA @ 4200 V
Capacitance @ Vr, F:- 
Mounting Type:Chassis Mount
Package / Case:DO-200AB, B-PUK
Supplier Device Package:- 
Operating Temperature - Junction:-40°C ~ 160°C
0 Remaining View Similar

In Stock

-
178

Please send RFQ , we will respond immediately.

Similar Products

Part Number D740N42TXPSA1 D740N44TXPSA1   D740N48TXPSA1   D740N46TXPSA1   D740N40TXPSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Active Obsolete Obsolete
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 4200 V 4400 V 4800 V 4600 V 4000 V
Current - Average Rectified (Io) 750A 750A 750A 750A 750A
Voltage - Forward (Vf) (Max) @ If 1.45 V @ 700 A 1.45 V @ 700 A 1.45 V @ 700 A 1.45 V @ 700 A 1.45 V @ 700 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 70 mA @ 4200 V 70 mA @ 4400 V 70 mA @ 4800 V 70 mA @ 4600 V 70 mA @ 4000 V
Capacitance @ Vr, F - - - - -
Mounting Type Chassis Mount Chassis Mount Chassis Mount Chassis Mount Chassis Mount
Package / Case DO-200AB, B-PUK DO-200AB, B-PUK DO-200AB, B-PUK DO-200AB, B-PUK DO-200AB, B-PUK
Supplier Device Package - - - - -
Operating Temperature - Junction -40°C ~ 160°C -40°C ~ 160°C -40°C ~ 160°C -40°C ~ 160°C -40°C ~ 160°C

Related Product By Categories

1N1200A
1N1200A
GeneSiC Semiconductor
DIODE GEN PURP 100V 12A DO4
STTH802SF
STTH802SF
STMicroelectronics
200V ULTRAFAST RECOVERY DIODE
UF2G_R1_00001
UF2G_R1_00001
Panjit International Inc.
SMB, ULTRA
SB240E-G
SB240E-G
Comchip Technology
DIODE SCHOTTKY 40V 2A DO15
SS2H9-E3/52T
SS2H9-E3/52T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 90V 2A DO214AA
SS14L RUG
SS14L RUG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 1A SUB SMA
VBT3080S-M3/4W
VBT3080S-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30A 80V TO-263AB
1N5617/TR
1N5617/TR
Microchip Technology
RECTIFIER UFR,FRR
JAN1N5553/TR
JAN1N5553/TR
Microchip Technology
STD RECTIFIER
RS1BB-13
RS1BB-13
Diodes Incorporated
DIODE GEN PURP 100V 1A SMB
MA3X152K0L
MA3X152K0L
Panasonic Electronic Components
DIODE GEN PURP 80V 100MA MINI3
SF45GHA0G
SF45GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 4A DO201AD

Related Product By Brand

BFR181E6327HTSA1
BFR181E6327HTSA1
Infineon Technologies
RF TRANS NPN 12V 8GHZ SOT23-3
AUIRFR9024N
AUIRFR9024N
Infineon Technologies
AUIRFR9024 - 20V-150V P-CHANNEL
IRFS4610TRLPBF
IRFS4610TRLPBF
Infineon Technologies
MOSFET N-CH 100V 73A D2PAK
AIKW75N60CTE8188XKSA1
AIKW75N60CTE8188XKSA1
Infineon Technologies
IGBT 600V TO247-3
IRS2007STRPBF
IRS2007STRPBF
Infineon Technologies
HVIC
IR2214SSPBF
IR2214SSPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 24SSOP
2ED2304S06FXLSA1
2ED2304S06FXLSA1
Infineon Technologies
2ED2304S06 - 2ED2304S - GATE DRI
ITS4200SMEOHUMA1
ITS4200SMEOHUMA1
Infineon Technologies
IC PWR SWTCH N-CHAN 1:1 SOT223-4
MB90F022CPF-GS-9209
MB90F022CPF-GS-9209
Infineon Technologies
IC MCU MICOM FLASH 100QFP
CY96F385RSBPMC-GS216UJE2
CY96F385RSBPMC-GS216UJE2
Infineon Technologies
IC MCU 16BIT 160KB FLASH 120LQFP
CY8C201A0-LDX2IT
CY8C201A0-LDX2IT
Infineon Technologies
IC CAPSENSE EXP 10 I/O 16QFN
CY7C1041CV33-15VXC
CY7C1041CV33-15VXC
Infineon Technologies
IC SRAM 4MBIT PARALLEL 44SOJ