D711N60TXPSA1
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Infineon Technologies D711N60TXPSA1

Manufacturer No:
D711N60TXPSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
D711N60TXPSA1 Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 6KV 1070A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):6000 V
Current - Average Rectified (Io):1070A
Voltage - Forward (Vf) (Max) @ If:1.9 V @ 1200 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:50 mA @ 6000 V
Capacitance @ Vr, F:- 
Mounting Type:Chassis Mount
Package / Case:DO-200AB, B-PUK
Supplier Device Package:- 
Operating Temperature - Junction:-40°C ~ 160°C
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$628.48
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Similar Products

Part Number D711N60TXPSA1 D711N65TXPSA1   D711N68TXPSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 6000 V 6500 V 6800 V
Current - Average Rectified (Io) 1070A 1070A 1070A
Voltage - Forward (Vf) (Max) @ If 1.9 V @ 1200 A 1.9 V @ 1200 A 1.9 V @ 1200 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - -
Current - Reverse Leakage @ Vr 50 mA @ 6000 V 50 mA @ 6500 V 50 mA @ 6800 V
Capacitance @ Vr, F - - -
Mounting Type Chassis Mount Chassis Mount Chassis Mount
Package / Case DO-200AB, B-PUK DO-200AB, B-PUK DO-200AB, B-PUK
Supplier Device Package - - -
Operating Temperature - Junction -40°C ~ 160°C -40°C ~ 160°C -40°C ~ 160°C

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