D251K18BB01XPSA1
  • Share:

Infineon Technologies D251K18BB01XPSA1

Manufacturer No:
D251K18BB01XPSA1
Manufacturer:
Infineon Technologies
Package:
Tray
Datasheet:
D251K18BB01XPSA1 Datasheet
ECAD Model:
-
Description:
STD THYR DIODEN DISC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1800 V
Current - Average Rectified (Io):255A
Voltage - Forward (Vf) (Max) @ If:- 
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:30 mA @ 1800 V
Capacitance @ Vr, F:- 
Mounting Type:Stud Mount
Package / Case:BG-DSW27-1
Supplier Device Package:BG-DSW27-1
Operating Temperature - Junction:-40°C ~ 180°C
0 Remaining View Similar

In Stock

-
199

Please send RFQ , we will respond immediately.

Similar Products

Part Number D251K18BB01XPSA1 D251N18BB01XPSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 1800 V 1800 V
Current - Average Rectified (Io) 255A 255A
Voltage - Forward (Vf) (Max) @ If - -
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 30 mA @ 1800 V 30 mA @ 1800 V
Capacitance @ Vr, F - -
Mounting Type Stud Mount Stud Mount
Package / Case BG-DSW27-1 BG-DSW27-1
Supplier Device Package BG-DSW27-1 BG-DSW27-1
Operating Temperature - Junction -40°C ~ 180°C -40°C ~ 180°C

Related Product By Categories

DSF01S30SL,L3F
DSF01S30SL,L3F
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 100MA SL2
BAV21WS-E3-18
BAV21WS-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA SOD323
S1M-M3/5AT
S1M-M3/5AT
Vishay General Semiconductor - Diodes Division
DIODE GPP 1A 1000V DO-214AC
1N5408G R0G
1N5408G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO201AD
CDLL486B
CDLL486B
Microchip Technology
DIODE GEN PURP 250V 200MA DO213
SICRB101200
SICRB101200
SMC Diode Solutions
DIODE SCHOTTKY SILICON CARBIDE S
VS-6FL80S05
VS-6FL80S05
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 6A DO203AA
SE07PD-E3/85A
SE07PD-E3/85A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 700MA DO220
SK34AE3/TR13
SK34AE3/TR13
Microsemi Corporation
DIODE SCHOTTKY 40V 3A SMB
SS38HE-TP
SS38HE-TP
Micro Commercial Co
DIODE SCHOTTKY 80V 3A SOD123HE
RS1GL RHG
RS1GL RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 800MA SUBSMA
D4810N20TVFXPSA1
D4810N20TVFXPSA1
Infineon Technologies
DIODE GEN PURP 2KV 4810A

Related Product By Brand

BA 892-02L E6327
BA 892-02L E6327
Infineon Technologies
RF DIODE STANDARD 35V TSLP-2-1
IRF7807ZTRPBF
IRF7807ZTRPBF
Infineon Technologies
MOSFET N-CH 30V 11A 8SO
IRFP048N
IRFP048N
Infineon Technologies
MOSFET N-CH 55V 64A TO247AC
IRFB3507PBF
IRFB3507PBF
Infineon Technologies
MOSFET N-CH 75V 97A TO220AB
IRF7450PBF
IRF7450PBF
Infineon Technologies
MOSFET N-CH 200V 2.5A 8SO
PEB 2466 H V2.2
PEB 2466 H V2.2
Infineon Technologies
IC TELECOM INTERFACE MQFP-64
CYW920719Q40EVB-01
CYW920719Q40EVB-01
Infineon Technologies
EVAL BRD CYW20719 BLE BT5
CY28441ZXC
CY28441ZXC
Infineon Technologies
IC CLK GEN CPU 133MHZ 2CIRC
CY7B995AXIT
CY7B995AXIT
Infineon Technologies
IC CLK BUFF 8OUT 200MHZ 44TQFP
CY8C4025AZI-S403T
CY8C4025AZI-S403T
Infineon Technologies
IC MCU 32BIT 32KB FLASH 48TQFP
CY7C1393BV18-250BZI
CY7C1393BV18-250BZI
Infineon Technologies
IC SRAM 18MBIT PARALLEL 165FBGA
S25FL128LAGNFI011
S25FL128LAGNFI011
Infineon Technologies
IC FLASH 128MBIT SPI/QUAD 8WSON