D1481N60TXPSA1
  • Share:

Infineon Technologies D1481N60TXPSA1

Manufacturer No:
D1481N60TXPSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
D1481N60TXPSA1 Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 6KV 2200A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):6000 V
Current - Average Rectified (Io):2200A
Voltage - Forward (Vf) (Max) @ If:1.8 V @ 2500 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:50 mA @ 6000 V
Capacitance @ Vr, F:- 
Mounting Type:Chassis Mount
Package / Case:DO-200AC, K-PUK
Supplier Device Package:- 
Operating Temperature - Junction:-40°C ~ 160°C
0 Remaining View Similar

In Stock

-
481

Please send RFQ , we will respond immediately.

Similar Products

Part Number D1481N60TXPSA1 D1481N68TXPSA1   D1481N62TXPSA1   D1481N65TXPSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Obsolete Obsolete
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 6000 V 6800 V 6200 V 6500 V
Current - Average Rectified (Io) 2200A 2200A 2200A 2200A
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 2500 A 1.8 V @ 2500 A 1.8 V @ 2500 A 1.8 V @ 2500 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - -
Current - Reverse Leakage @ Vr 50 mA @ 6000 V 50 mA @ 6800 V 50 mA @ 6200 V 50 mA @ 6500 V
Capacitance @ Vr, F - - - -
Mounting Type Chassis Mount Chassis Mount Chassis Mount Chassis Mount
Package / Case DO-200AC, K-PUK DO-200AC, K-PUK DO-200AC, K-PUK DO-200AC, K-PUK
Supplier Device Package - - - -
Operating Temperature - Junction -40°C ~ 160°C -40°C ~ 160°C -40°C ~ 160°C -40°C ~ 160°C

Related Product By Categories

BAS170WS-E3-08
BAS170WS-E3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 70V 70MA SOD323
1N5401G
1N5401G
onsemi
DIODE GEN PURP 100V 3A AXIAL
VS-40HFR100
VS-40HFR100
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 40A DO203AB
SS26-HF
SS26-HF
Comchip Technology
DIODE SCHOTTKY 60V 2A DO214AC SM
ES2D-M3/5BT
ES2D-M3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA
RS3G-E3/9AT
RS3G-E3/9AT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 3A DO214AB
BYV98-150-TAP
BYV98-150-TAP
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 150V 4A SOD64
VS-6FLR60S05
VS-6FLR60S05
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 6A DO203AA
MBRH200100
MBRH200100
GeneSiC Semiconductor
DIODE SCHOTTKY 100V 200A D-67
BAS16WT1
BAS16WT1
onsemi
DIODE SWITCH 200MA 75V SOT323
DB2440300L
DB2440300L
Panasonic Electronic Components
DIODE SCHOTTKY 40V 3A TMINIP2
RS1JLHRQG
RS1JLHRQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 800MA SUBSMA

Related Product By Brand

ESD5V3S1U-02LRH E6327
ESD5V3S1U-02LRH E6327
Infineon Technologies
TVS DIODE 5.3VWM 11VC TSLP-2-17
IRL2505PBF
IRL2505PBF
Infineon Technologies
MOSFET N-CH 55V 104A TO220AB
IMZA65R027M1HXKSA1
IMZA65R027M1HXKSA1
Infineon Technologies
MOSFET 650V NCH SIC TRENCH
IRFR2405TRLPBF
IRFR2405TRLPBF
Infineon Technologies
MOSFET N-CH 55V 56A DPAK
SPD30N06S2L-23
SPD30N06S2L-23
Infineon Technologies
MOSFET N-CH 55V 30A TO252-3
IPB055N03LGATMA1
IPB055N03LGATMA1
Infineon Technologies
MOSFET N-CH 30V 50A D2PAK
XC886C8FFI5VACFXUMA1
XC886C8FFI5VACFXUMA1
Infineon Technologies
IC MCU 8BIT 32KB FLASH 48TQFP
MB89697BPFM-G-115-BND
MB89697BPFM-G-115-BND
Infineon Technologies
IC MCU 8BIT FFMC-8L-0.5 64LQFP
MB89637PF-GT-1430
MB89637PF-GT-1430
Infineon Technologies
IC MCU 8BIT 32KB MROM 64QFP
CY7C1372KV33-167AXI
CY7C1372KV33-167AXI
Infineon Technologies
IC SRAM 18MBIT PARALLEL 100TQFP
CY7C1399BN-20ZXCT
CY7C1399BN-20ZXCT
Infineon Technologies
IC SRAM 256KBIT PAR 28TSOP I
FM25640B-GATR
FM25640B-GATR
Infineon Technologies
IC FRAM 64KBIT SPI 4MHZ 8SOIC