D1230N18TXPSA1
  • Share:

Infineon Technologies D1230N18TXPSA1

Manufacturer No:
D1230N18TXPSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
D1230N18TXPSA1 Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 1.8KV 1230A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1800 V
Current - Average Rectified (Io):1230A
Voltage - Forward (Vf) (Max) @ If:1.063 V @ 800 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:50 mA @ 1800 V
Capacitance @ Vr, F:- 
Mounting Type:Chassis Mount
Package / Case:DO-200AA, A-PUK
Supplier Device Package:- 
Operating Temperature - Junction:-40°C ~ 180°C
0 Remaining View Similar

In Stock

$143.39
2

Please send RFQ , we will respond immediately.

Similar Products

Part Number D1230N18TXPSA1 D1230N14TXPSA1   D1230N16TXPSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1800 V 1400 V 1600 V
Current - Average Rectified (Io) 1230A 1230A 1230A
Voltage - Forward (Vf) (Max) @ If 1.063 V @ 800 A 1.063 V @ 800 A 1.063 V @ 800 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - -
Current - Reverse Leakage @ Vr 50 mA @ 1800 V 50 mA @ 1400 V 50 mA @ 1600 V
Capacitance @ Vr, F - - -
Mounting Type Chassis Mount Chassis Mount Chassis Mount
Package / Case DO-200AA, A-PUK DO-200AA, A-PUK DO-200AA, A-PUK
Supplier Device Package - - -
Operating Temperature - Junction -40°C ~ 180°C -40°C ~ 180°C -40°C ~ 180°C

Related Product By Categories

BAS16LD,315
BAS16LD,315
Nexperia USA Inc.
DIODE GP 100V 215MA SOD882D
S1G-HF
S1G-HF
Comchip Technology
RECTIFIER GEN PURP 400V 1A SMA
S5JBHR5G
S5JBHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 5A DO214AA
BAL99-E3-08
BAL99-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 70V 250MA SOT23
UF4004-M3/73
UF4004-M3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
S2M R5G
S2M R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 2A DO214AA
V12PM10-M3/H
V12PM10-M3/H
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 12A TO277A
JANTXV1N5417US/TR
JANTXV1N5417US/TR
Microchip Technology
RECTIFIER UFR,FRR
BAS 16-02V E6327
BAS 16-02V E6327
Infineon Technologies
DIODE GEN PURP 80V 200MA SC79-2
MBRB1035-E3/81
MBRB1035-E3/81
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 35V 10A TO263AB
VS-20ETS12STRRPBF
VS-20ETS12STRRPBF
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 20A TO263AB
ES1DLHMHG
ES1DLHMHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SUB SMA

Related Product By Brand

BB 689 E7902
BB 689 E7902
Infineon Technologies
DIODE VAR CAP 30V 20MA SCD-80
IRFB4410ZGPBF
IRFB4410ZGPBF
Infineon Technologies
MOSFET N-CH 100V 97A TO220AB
IPB60R099C7ATMA1
IPB60R099C7ATMA1
Infineon Technologies
MOSFET N-CH 650V 22A TO263-3
SPA11N60C3IN
SPA11N60C3IN
Infineon Technologies
MOSFET N-CH 650V 11A TO220-3-31
IRF7807ZPBF
IRF7807ZPBF
Infineon Technologies
MOSFET N-CH 30V 11A 8SO
IPP80N06S2L-07
IPP80N06S2L-07
Infineon Technologies
MOSFET N-CH 55V 80A TO220-3
IRF6665TR1
IRF6665TR1
Infineon Technologies
MOSFET N-CH 100V 4.2A DIRECTFET
AIKB50N65DF5ATMA1
AIKB50N65DF5ATMA1
Infineon Technologies
DISCRETE SWITCHES
ISO1H815GAUMA1
ISO1H815GAUMA1
Infineon Technologies
IC PWR DRIVER N-CHAN 1:1 DSO-36
CY62167G30-55BVXE
CY62167G30-55BVXE
Infineon Technologies
IC SRAM 16MBIT PARALLEL 48VFBGA
S25FL032P0XMFI000
S25FL032P0XMFI000
Infineon Technologies
IC FLASH 32MBIT SPI/QUAD 16SOIC
CY39C031WQN-G-142-JNEFE1
CY39C031WQN-G-142-JNEFE1
Infineon Technologies
IC REG TRPL BUCK/LNR SYNC 28QFN