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| Part Number | CYD09S18V18-200BBXC | CYD09S18V18-200BBXI |
|---|---|---|
| Manufacturer | Infineon Technologies | Rochester Electronics, LLC |
| Product Status | Obsolete | Obsolete |
| Memory Type | Volatile | Volatile |
| Memory Format | SRAM | SRAM |
| Technology | SRAM - Dual Port, Synchronous | SRAM - Dual Port, Synchronous |
| Memory Size | 9Mb (512K x 18) | 9Mb (512K x 18) |
| Memory Interface | Parallel | Parallel |
| Clock Frequency | 200 MHz | 200 MHz |
| Write Cycle Time - Word, Page | - | - |
| Access Time | 3.3 ns | 3.3 ns |
| Voltage - Supply | 1.42V ~ 1.58V, 1.7V ~ 1.9V | 1.42V ~ 1.58V, 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 70°C (TA) | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | 256-LBGA | 256-LBGA |
| Supplier Device Package | 256-FBGA (17x17) | 256-FBGA (17x17) |
