CY7C10612GE30-10ZSXIT
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Infineon Technologies CY7C10612GE30-10ZSXIT

Manufacturer No:
CY7C10612GE30-10ZSXIT
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
CY7C10612GE30-10ZSXIT Datasheet
ECAD Model:
-
Description:
IC SRAM 16MBIT PAR 54TSOP II
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Memory Type:Volatile
Memory Format:SRAM
Technology:SRAM - Asynchronous
Memory Size:16Mb (1M x 16)
Memory Interface:Parallel
Clock Frequency:- 
Write Cycle Time - Word, Page:10ns
Access Time:10 ns
Voltage - Supply:3V ~ 3.6V
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Surface Mount
Package / Case:54-TSOP (0.400", 10.16mm Width)
Supplier Device Package:54-TSOP II
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In Stock

$130.55
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Similar Products

Part Number CY7C10612GE30-10ZSXIT CY7C1061GE30-10ZSXIT   CY7C10612GN30-10ZSXIT   CY7C10612G30-10ZSXIT   CY7C10612GE30-10ZSXI  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active
Memory Type Volatile Volatile Volatile Volatile Volatile
Memory Format SRAM SRAM SRAM SRAM SRAM
Technology SRAM - Asynchronous SRAM - Asynchronous SRAM - Asynchronous SRAM - Asynchronous SRAM - Asynchronous
Memory Size 16Mb (1M x 16) 16Mb (1M x 16) 16Mb (1M x 16) 16Mb (1M x 16) 16Mb (1M x 16)
Memory Interface Parallel Parallel Parallel Parallel Parallel
Clock Frequency - - - - -
Write Cycle Time - Word, Page 10ns 10ns 10ns 10ns 10ns
Access Time 10 ns 10 ns 10 ns 10 ns 10 ns
Voltage - Supply 3V ~ 3.6V 2.2V ~ 3.6V 2.2V ~ 3.6V 3V ~ 3.6V 3V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA) -40°C ~ 85°C (TA) -40°C ~ 85°C (TA) -40°C ~ 85°C (TA) -40°C ~ 85°C (TA)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 54-TSOP (0.400", 10.16mm Width) 54-TSOP (0.400", 10.16mm Width) 54-TSOP (0.400", 10.16mm Width) 54-TSOP (0.400", 10.16mm Width) 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package 54-TSOP II 54-TSOP II 54-TSOP II 54-TSOP II 54-TSOP II

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