CY621472G30-45ZSXIT
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Infineon Technologies CY621472G30-45ZSXIT

Manufacturer No:
CY621472G30-45ZSXIT
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
CY621472G30-45ZSXIT Datasheet
ECAD Model:
-
Description:
IC SRAM 4MBIT PARALLEL 44TSOP II
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Memory Type:Volatile
Memory Format:SRAM
Technology:SRAM - Asynchronous
Memory Size:4Mb (256K x 16)
Memory Interface:Parallel
Clock Frequency:- 
Write Cycle Time - Word, Page:45ns
Access Time:45 ns
Voltage - Supply:2.2V ~ 3.6V
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Surface Mount
Package / Case:44-TSOP (0.400", 10.16mm Width)
Supplier Device Package:44-TSOP II
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In Stock

$5.65
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Similar Products

Part Number CY621472G30-45ZSXIT CY621472GN30-45ZSXIT   CY62147G30-45ZSXIT   CY621472G30-45ZSXAT   CY621472G30-45ZSXI  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active
Memory Type Volatile Volatile Volatile Volatile Volatile
Memory Format SRAM SRAM SRAM SRAM SRAM
Technology SRAM - Asynchronous SRAM - Asynchronous SRAM - Asynchronous SRAM - Asynchronous SRAM - Asynchronous
Memory Size 4Mb (256K x 16) 4Mb (256K x 16) 4Mb (256K x 16) 4Mb (256K x 16) 4Mb (256K x 16)
Memory Interface Parallel Parallel Parallel Parallel Parallel
Clock Frequency - - - - -
Write Cycle Time - Word, Page 45ns 45ns 45ns 45ns 45ns
Access Time 45 ns 45 ns 45 ns 45 ns 45 ns
Voltage - Supply 2.2V ~ 3.6V 2.2V ~ 3.6V 2.2V ~ 3.6V 2.2V ~ 3.6V 2.2V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA) -40°C ~ 85°C (TA) -40°C ~ 85°C (TA) -40°C ~ 85°C (TA) -40°C ~ 85°C (TA)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 44-TSOP (0.400", 10.16mm Width) 44-TSOP (0.400", 10.16mm Width) 44-TSOP (0.400", 10.16mm Width) 44-TSOP (0.400", 10.16mm Width) 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package 44-TSOP II 44-TSOP II 44-TSOP II 44-TSOP II 44-TSOP II

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