BUZ80A
  • Share:

Infineon Technologies BUZ80A

Manufacturer No:
BUZ80A
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
BUZ80A Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 3.6A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1350 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):100W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

-
581

Please send RFQ , we will respond immediately.

Similar Products

Part Number BUZ80A BUZ30A  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 200 V
Current - Continuous Drain (Id) @ 25°C 3.6A (Tc) 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 2A, 10V 130mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 25 V 1900 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 100W (Tc) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220AB PG-TO220-3-1
Package / Case TO-220-3 TO-220-3

Related Product By Categories

DMN3200U-7
DMN3200U-7
Diodes Incorporated
MOSFET N-CH 30V 2.2A SOT23-3
BSC0904NSIATMA1
BSC0904NSIATMA1
Infineon Technologies
MOSFET N-CH 30V 20A/78A TDSON
SIR404DP-T1-GE3
SIR404DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 20V 60A PPAK SO-8
IRF9610PBF
IRF9610PBF
Vishay Siliconix
MOSFET P-CH 200V 1.8A TO220AB
MSC360SMA120S
MSC360SMA120S
Microchip Technology
MOSFET SIC 1200 V 360 MOHM TO-26
STP10NK80Z
STP10NK80Z
STMicroelectronics
MOSFET N-CH 800V 9A TO220AB
NVHL160N120SC1
NVHL160N120SC1
onsemi
SICFET N-CH 1200V 17A TO247-3
DMN2310U-13
DMN2310U-13
Diodes Incorporated
MOSFET BVDSS: 8V~24V SOT23 T&R 1
IPI90N06S4L04AKSA2
IPI90N06S4L04AKSA2
Infineon Technologies
MOSFET N-CH 60V 90A TO262-3
IRF510STRR
IRF510STRR
Vishay Siliconix
MOSFET N-CH 100V 5.6A D2PAK
FDJ128N
FDJ128N
onsemi
MOSFET N-CH 20V 5.5A SC75-6 FLMP
IPS06N03LA G
IPS06N03LA G
Infineon Technologies
MOSFET N-CH 25V 50A TO251-3

Related Product By Brand

BF2030WE6814BTSA1
BF2030WE6814BTSA1
Infineon Technologies
MOSFET N-CH 8V 40MA SOT-343
BSP295H6327XTSA1
BSP295H6327XTSA1
Infineon Technologies
MOSFET N-CH 60V 1.8A SOT223-4
IPW60R165CPFKSA1
IPW60R165CPFKSA1
Infineon Technologies
MOSFET N-CH 600V 21A TO247-3
IRLR3303TRRPBF
IRLR3303TRRPBF
Infineon Technologies
MOSFET N-CH 30V 35A DPAK
FF650R17IE4DPB2BOSA1
FF650R17IE4DPB2BOSA1
Infineon Technologies
IGBT MODULE 1700V 650A
IKW25N120T2XK
IKW25N120T2XK
Infineon Technologies
IGBT, 50A, 1200V, N-CHANNEL
SAK-XC167CI16F40FBBKXQMA1
SAK-XC167CI16F40FBBKXQMA1
Infineon Technologies
LEGACY 16-BIT FLASH MCU
IR21362
IR21362
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 28DIP
MB91016PFV-GS-104E1
MB91016PFV-GS-104E1
Infineon Technologies
IC MCU 144LQFP
CY7C1019B-12ZXC
CY7C1019B-12ZXC
Infineon Technologies
IC SRAM 1MBIT PARALLEL 32TSOP II
CY7C1413BV18-200BZC
CY7C1413BV18-200BZC
Infineon Technologies
IC SRAM 36MBIT PARALLEL 165FBGA
CY39C031WQN-G-141-JNEFE1
CY39C031WQN-G-141-JNEFE1
Infineon Technologies
IC REG TRPL BUCK/LNR SYNC 28QFN