BUZ80A
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Infineon Technologies BUZ80A

Manufacturer No:
BUZ80A
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
BUZ80A Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 3.6A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1350 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):100W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number BUZ80A BUZ30A  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 200 V
Current - Continuous Drain (Id) @ 25°C 3.6A (Tc) 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 2A, 10V 130mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 25 V 1900 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 100W (Tc) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220AB PG-TO220-3-1
Package / Case TO-220-3 TO-220-3

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