BUZ73AHXKSA1
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Infineon Technologies BUZ73AHXKSA1

Manufacturer No:
BUZ73AHXKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
BUZ73AHXKSA1 Datasheet
ECAD Model:
-
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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$0.38
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Similar Products

Part Number BUZ73AHXKSA1 BUZ73HXKSA1   BUZ73ALHXKSA1   BUZ73LHXKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Obsolete Obsolete Obsolete
FET Type - N-Channel N-Channel N-Channel
Technology - MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 200 V 200 V 200 V
Current - Continuous Drain (Id) @ 25°C - 7A (Tc) 5.5A (Tc) 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V 5V 5V
Rds On (Max) @ Id, Vgs - 400mOhm @ 4.5A, 10V 600mOhm @ 3.5A, 5V 400mOhm @ 3.5A, 5V
Vgs(th) (Max) @ Id - 4V @ 1mA 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - - -
Vgs (Max) - ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds - 530 pF @ 25 V 840 pF @ 25 V 840 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) - 40W (Tc) 40W (Tc) 40W (Tc)
Operating Temperature - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type - Through Hole Through Hole Through Hole
Supplier Device Package - PG-TO220-3 PG-TO220-3 PG-TO220-3
Package / Case - TO-220-3 TO-220-3 TO-220-3

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